UT9435HZG-S08-R datasheet(1/5 Pages) DOINGTER

Numer części	UT9435HZG-S08-R

Szczegółowy opis	P-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Producent	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Strona internetowa	http://www.doingter.cn/

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Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-30V,ID=-5.1A,RDS(ON)<55mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

-5.1

A

Continuous Drain Current-TC=100℃

---

Pulsed Drain Current

1

-20

PD

Power Dissipation

4

2.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJA

Thermal Resistance,Junction to Ambient

2

50

G

D

S1

S

UT9435HZG-S08-R

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