SS8050 datasheet(1/3 Pages) RECTRON

Numer części	SS8050

Szczegółowy opis	Small and medium-sized power amplifier, medium power drive and switching applications

PDF	3 Pages

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Producent	RECTRON [Rectron Semiconductor]

Strona internetowa	http://www.rectron.com

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Silicon NPN SMD triode

1

base

2

emitter 3

collector

Small and medium-sized power amplifier ,

medium power drive and switching applications

HFE(1) :Classification

Rank

L

H

J

Range

120-200

200-350

300-400

Marking

Y1

Maximum ratings(Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Breakdown Voltage

VCBO

40

V

Collector-Emitter Breakdown Voltage

VCEO

25

V

Emitter-Base Breakdown Voltage

VEBO

5V

Collector Current

IC

1.5

A

Collector Power Dissipation

PC

300

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

Electrical Characteristics (Ta=25

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=100uA IE=0

40

V

Collector-Emitter Breakdown Voltage

VCEO

IC=1mA IB=0

25

V

Emitter-Base Breakdown Voltage

VEBO

IE=100uA IC=0

5

V

Collector Cutoff Current

ICBO

VCB=40V IE=0

100

nA

Collector Cutoff Current

ICEO

VCE=20V IB=0

100

nA

Emitter Cutoff Current

IEBO

VCE=5V IC=0

100

nA

DC Current Gain

HFE(1)

VCE=1V IC=100mA

120

400

HFE(2)

VCE=1V IC=800mA

50

Collector-Emitter Saturation Voltage

VCE(sat) IC=800mA IB=80mA

0.5

V

Collector-Base Saturation Voltage

VBE(sat) IC=800mA IB=80mA

1.2

V

transition frequency

fT

VCE=10V IC=50mA

f=30MHz

100

MHz

SS8050

P/N suffix V means AEC-Q101 qualified, e.g:SS8050V

P/N suffix V means Halogen-free

Ouline example

SOT-23

20

REV:C

19-07/17

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