SS8550 datasheet(1/3 Pages) RECTRON

Numer części	SS8550

Szczegółowy opis	Small and medium-sized power amplifier, medium power drive and switching applications

PDF	3 Pages

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Producent	RECTRON [Rectron Semiconductor]

Strona internetowa	http://www.rectron.com

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Silicon PNP SMD triode

1

base

2

emitter 3

collector

Ouline example

SOT-23

Small and medium-sized power amplifier ,

medium power drive and switching applications

HFE(1) :Classification

Rank

L

H

J

Range

120-200

200-350

300-400

Marking

Y2

Maximum ratings(Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Breakdown Voltage

VCBO

-40

V

Collector-Emitter Breakdown Voltage

VCEO

-25

V

Emitter-Base Breakdown Voltage

VEBO

-5

V

Collector Current

IC

-1.5

A

Collector Power Dissipation

PC

300

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

Electrical Characteristics (Ta=25

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=-100uA IE=0

-40

V

Collector-Emitter Breakdown Voltage

VCEO

IC=-1mA IB=0

-25

V

Emitter-Base Breakdown Voltage

VEBO

IE=-100uA IC=0

-5

V

Collector Cutoff Current

ICBO

VCB=-40V IE=0

-100

nA

Emitter Cutoff Current

IEBO

VCE=-5V IB=0

-100

nA

DC Current Gain

HFE(1)

VCE=-1V IC=-100mA

120

400

HFE(2)

VCE=-1V IC=-800mA

40

Collector-Emitter Saturation Voltage

VCE(sat) IC=-800mA IB=-80mA

-0.5

V

Collector-Base Saturation Voltage

VBE(sat) IC=-800mA IB=-80mA

-1.2

V

transition frequency

fT

VCE=-10V IC=50mA

f=30MHz

100

MHz

SS8550

P/N suffix V means AEC-Q101 qualified, e.g:SS8550V

P/N suffix V means Halogen-free

20

REV:C

19-07/17

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