REF50 datasheet(15/31 Pages) TI

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Thermal Hysteresis - Cycle 1 (ppm)

10%

15%

20%

25%

30%

D016

Figure 8-4. Thermal Hysteresis Distribution Cycle 1 (VOUT)

Thermal Hysteresis - Cycle 2 (ppm)

10%

15%

20%

25%

30%

D016

Figure 8-5. Thermal Hysteresis Distribution Cycle 2 (VOUT)

8.4 Power Dissipation

The REF34xx voltage references are capable of source and sink up to 10 mA of load current across the rated

input voltage range. However, when used in applications subject to high ambient temperatures, the input voltage

and load current must be carefully monitored to ensure that the device does not exceeded its maximum power

dissipation rating. The maximum power dissipation of the device can be calculated with Equation 2:

(2)

where

• PD is the device power dissipation

• TJ is the device junction temperature

• TA is the ambient temperature

• RθJA is the package (junction-to-air) thermal resistance

Because of this relationship, acceptable load current in high temperature conditions may be less than the

maximum current-sourcing capability of the device. In no case should the device be operated outside of its

maximum power rating because doing so can result in premature failure or permanent damage to the device.

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REF3425, REF3430, REF3433, REF3440, REF3450

SBAS804F – SEPTEMBER 2017 – REVISED JUNE 2021

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Product Folder Links: REF3425 REF3430 REF3433 REF3440 REF3450

REF50 Arkusz danych(PDF) 15 Page - Texas Instruments