VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7809

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Page 2

G52195-0, Rev 2.4

04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Notes: (1) Specified over 0°C (ambient) to 70°C (case).

(2) Typical conditions 25°C and 3.3V power supply.

(3) See Note 1 in Application Note 48.

(4) P = Incident Optical Power

(5) See Note 2 In Application Note 48.

Symbol

Parameter

Min

Max

Units

Conditions

Supply Voltage

3.0

3.3

3.6

V

Supply Current

14

23

40

mA

PSRR

Power Supply Rejection Ratio

-

-10

-

dB

Frequencies up to 40MHz

Use external filter to get

λ

Wavelength

700

840

850

nm

Low Frequency Cutoff

-

1.8

2.5

MHz

50MHz

BW

Optical Modulation Bandwidth

800

1100

-

MHz

-3db,

P = -15dBm @ 50MHz

S

Sensitivity

-20

-21

dBm

Single Ended Output Impedance

20

25

30

Ω

Differential Output Voltage

0.2

0.26

0.4

V

P = -5dBm,

Differential Responsivity

0.8

1.2

-

mV/

µW

P = -15dBm @ 50MHz

Output Bias Voltage

1.0

-

-

V

∆V

DC

Bias Offset Voltage

-

-

200

mV

Input Noise Equivalent Power

-

1

1.4

µW rms

P = 0mW

Output Noise Voltage

-

1.0

1.25

mV rms

P = 0mW

DCD

Duty Cycle Distortion

-

-

4.5

%

P = -5dBm

Output Drive Current

2.0

2.6

-

mA

P = -5dBm

PDJ

Pattern Dependent Jitter

-

35

60

ps

P = -5dBm

+/-10% Voltage Window

----

Optically Active Area

-

100

-

µm

Diameter

PPJ

PP Jitter

-

190

250

ps

P = -5 dBm

Rise Time

-

-

400

ps

20%-80% P = -5dBm

Fall Time

-

-

400

ps

20%-80% P = -5dBm