ECH8655R-R-TL-H datasheet(5/7 Pages) ONSEMI

5 / 7 page

ECH8655R−R−TL−H

www.onsemi.com

Figure 9. SW Time − ID

Figure 10. VGS − Qg

Figure 11. ASO

Figure 12. PD − TA

ID, Drain Current (V)

TA, Ambinet Temperature (5C)

Qg, Total Gate Charge (nC)

VDS, Drain−to−Source Voltage (V)

1000

100

0.1

1.0

1214

1820

100

1.0

0.1

0.01

0.01 2

0.1

1.0

1.8

1.6

1.5

1.4

1.2

1.0

0.8

0.6

0.4

0.2

100

120

140

160

PW ≤ 10 ms

VDD = 10 V

VGS = 4 V

td(on)

td(off)

VDS = 10 V

ID = 9 V

IDP = 60 A

IDP = 9 A

Operation in this

area is limited by RDS(on)

TA = 25°C

Single pulse

When mounted on ceramic substrate

(900mm2 x 0.8 mm) 1 unit

73 5 7

When mounted on ceramic substrate

(900mm2 x 0.8 mm)

When mounted on ceramic substrate

(900mm2 x 0.8 mm)

Total Dissinpation

1 unit

Since the ECH8655R−R−TL−H is a MOSFET product, please avoid using this device in the vicinity of highly charged

objects.

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