fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW

QIUPRIRVO

QIUUNINMS

RIMNTIRMU

RIMQVIVSN

RINUTINNT

RIQUSITNR

QIURMIMTO

QIVPNIUQQ

RIMPQITVS

RIMSPIPMT

RIOPTIQUN

RIPUNIMOR

IXYS reserves the right to change limits, test conditions, and dimensions.

V

0.0

0.5

1.0

1.5

2.0

2.5

0

10

20

30

40

50

Case Temperature -

-50

-25

0

25

50

75

100

125

150

0

5

10

15

20

25

30

0.001

0.010

0.100

V

0

5

10

15

20

25

30

35

40

100

1000

10000

Gate Charge - nC

0

50

100

150

200

250

300

350

0

3

6

9

12

15

Crss

Coss

Ciss

VDS = 500 V

ID = 12 A

IG = 10 mA

f = 1MHz

TJ = 125

oC

TJ = 25

oC

0.300

20000

Figure 6. Gate Charge

Figure 7. Capacitance Curves

Figure 8. Forward Voltage Drop of the Intrinsic Diode

Figure9. Drain Current vs. Case Temperature

Figure 10. Transient Thermal Resistance

IXFN 23N100

IXFN 24N100