SIRC04DP datasheet(5/9 Pages) VISHAY

Numer części	SIRC04DP

Szczegółowy opis	N-Channel 30 V (D-S) MOSFET With Schottky Diode

PDF	9 Pages

Scroll/Zoom	100%

Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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5 / 9 page

SiRC04DP

www.vishay.com

Vishay Siliconix

S21-0840-Rev. B, 09-Aug-2021

Document Number: 62954

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Current Derating a

Power, Junction-to-Case

Power, Junction-to-Ambient

Note

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

120

100

125

150

C - Case Temperature (°C)

PACKAGE LIMITED

100

125

150

C - Case Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

100

125

150

A - Ambient Temperature (°C)

SIRC04DP Arkusz danych(PDF) 5 Page - Vishay Siliconix