Data Sheet

ADPA7008

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

Rev. 0

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FEATURES

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Output P1dB: 30 dBm typical at 22 GHz to 40 GHz

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Gain: 17.5 dB typical at 22 GHz to 40 GHz

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Input return loss: 12 dB typical at 22 GHz to 40 GHz

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Output return loss: 9.5 dB typical at 22 GHz to 40 GHz

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Output IP3: 37 dBm typical at 22 GHz to 40 GHz

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Supply voltage: 5 V typical at 1500 mA

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50 Ω matched input and output

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18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with

heat sink [LCC_HS]

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Integrated power detector

APPLICATIONS

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Aerospace and defense

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Test instrumentation

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Communications

GENERAL DESCRIPTION

The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transistor (pHEMT), monolithic microwave integrat-

distributed power amplifier with an integrated temperature compen-

sated on-chip power detector that operates from 20 GHz to 54

GHz. The amplifier provides 17.5 dB of small signal gain, an output

power for 1 dB compression (P1dB) of 30 dBm with an excellent

IP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008

is ideal for linear applications such as electronic countermeasure

The RF input and outputs are internally matched and dc blocked for

ease of integration into higher level assemblies. The ADPA7008 is

housed in a 7 mm × 7 mm, ceramic leadless package with heat sink

[LCC_HS] that exhibits low thermal resistance and is compatible

with surface-mount manufacturing techniques.

FUNCTIONAL BLOCK DIAGRAM

Figure 1.