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ART1K6FHSU Arkusz danych(PDF) 9 Page - Ampleon Netherlands B.V. |
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ART1K6FHSU Arkusz danych(HTML) 9 Page - Ampleon Netherlands B.V. |
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9 / 18 page ![]() ART1K6FH_1K6FHS_1K6FHG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2022. All rights reserved. Product data sheet Rev. 2 — 22 March 2022 9 of 18 ART1K6FH(S)(G) Power LDMOS transistor VDS = 55 V; f = 108 MHz; tp = 100 s; =10 %. (1) IDq = 50 mA per section (2) IDq = 100 mA per section (3) IDq = 200 mA per section (4) IDq = 400 mA per section (5) IDq = 600 mA per section VDS = 55 V; f = 108 MHz; tp = 100 s; =10%. (1) IDq = 50 mA per section (2) IDq = 100 mA per section (3) IDq = 200 mA per section (4) IDq = 400 mA per section (5) IDq = 600 mA per section Fig 7. Power gain as a function of output power; typical values Fig 8. Drain efficiency as a function of output power; typical values amp01460 0 400 800 1200 1600 2000 22 24 26 28 30 32 PL (W) Gp Gp (dB) (dB) (dB) (5) (5) (5) (4) (4) (4) (3) (3) (3) (2) (2) (2) (1) (1) (1) amp01461 0 400 800 1200 1600 2000 0 20 40 60 80 100 PL (W) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) |
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