BAS33 datasheet(2/3 Pages) VISHAY

2 / 3 page

BAS33, BAS34

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 26-Nov-2021

Document Number: 85541

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

Reverse current

≤ 300 Ix, VR

≤ 300 Ix, VR, Tj = 125 °C

0.5

μA

≤ 300 Ix, VR = 15 V

BAS33

0.5

≤ 300 Ix, VR = 30 V

BAS34

0.5

Breakdown voltage

IR = 5 μA, tp/T = 0.01,

tp = 0.3 ms

BAS33

V(BR)

BAS34

V(BR)

Diode capacitance

VR = 0 V, f = 1 MHz,

3pF

04080

120

160

100

1000

10 000

Tj - Junction Temperature (°C)

200

94 9079

Scattering Limit

VR =VRRM

0.4

0.8

1.2

1.6

0.1

100

1000

VF - Forward Voltage (V)

2.0

94 9078

Scattering Limit

Tj =25 °C

94 9366

Rev. 6 - Date: 19. December 2011

Document no.: SB-V-3906.04-031(4)

26 min. [1.024]

3.9 max. [0.154]

26 min. [1.024]

Cathode Identification

3.1 min. [0.120]

BAS33 Arkusz danych(PDF) 2 Page - Vishay Siliconix

BAS33 Arkusz danych(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3

Arkusz danych Pobierz

Link URL