VS-U5FX60FA120 datasheet(2/6 Pages) VISHAY

2 / 6 page

VS-U5FX60FA120

www.vishay.com

Vishay Semiconductors

Revision: 19-May-2022

Document Number: 96946

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Typical Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Reverse recovery time

trr

TJ = 25 °C

IF = 30 A,

diF/dt = 1000 A/μs,

VR = 800 V

-41

TJ = 125 °C

Peak recovery current

IRRM

TJ = 25 °C

TJ = 125 °C

Reverse recovery charge

Qrr

TJ = 25 °C

0.8

μC

TJ = 125 °C

2.3

Junction capacitance

VR = 1200 V, f = 1 MHz

13.4

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Thermal resistance junction to case,

per diode

RthJC

1.1

°C/W

Thermal resistance junction to case,

per module

0.55

Thermal resistance case to heatsink,

per module

RthCS

Flat, greased surface

0.05

Weight

-30

Mounting torque

Torque per diode

1.1 (9.7)

Nm (lbf.in)

Torque to heatsink

1.8 (15.9)

Nm (lbf.in)

Case style

SOT-227

100

110

120

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

FM (V)

J = 150 °C

J = 175 °C

J = 125 °C

J = 25 °C

0.0001

0.001

0.01

0.1

200

400

600

800

1000

1200

R (V)

25 °C

125 °C

150 °C

175 °C

VS-U5FX60FA120 Arkusz danych(PDF) 2 Page - Vishay Siliconix

VS-U5FX60FA120 Arkusz danych(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6

Arkusz danych Pobierz

Link URL