QPD1016L

DC

– 1.7 GHz, 50 V, 500 W GaN RF Transistor

Datasheet Rev. A, September 2020 | Subject to change without notice

- 3 of 23 -

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1.2

Parameter

Min

Typ

Max

Units

–

18.0

–

 dB

Output Power at 3dB compression point, P3dB

–

57.3

–

dBm

Drain Efficiency at 3dB compression point,

DEFF3dB

–

67.3

–

%

Gain at 3dB compression point, G3dB

–

15.0

–

dB

-40

mA

Notes:

1.

2.

Performance at 1.3 GHz in a 1.2 to 1.4 GHz Evaluation Board

RF Characterization

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

3

 10:1

Notes:

1.

2.

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.