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Zakładka z wyszukiwarką danych komponentów |
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IPB017N08N5 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPB017N08N5 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IPB017N08N5 DESCRIPTION · Drain Source Voltage : VDSS= 80V(Min) · Low RDS(ON) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 80 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 177 A Ptot Total Dissipation@TC=25℃ 375 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.4 ℃ /W |
Podobny numer części - IPB017N08N5 |
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Podobny opis - IPB017N08N5 |
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