M01N60 datasheet(2/5 Pages) STANSON

2 / 5 page

N Channel MOSFET

M01N60

1.0A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

*Pulse Test: Pulse Width ≦300μS, Duty Cycle ≦ 2%

**Negligible, Dominated by circuit inductance

PARAMETERS

SYMBO

MIN

TYP

MAX UNIT

CONDITION

Drain-Source Breakdown Voltage

V(BR)DSS

600

Vdc

VGS=0, ID=250uA

Drain-Source Leakage Current

IDSS

1.0

0.25

VDS=600V, VGS=0

VDS=480V, VGS=0, Tj=125℃

Gate-Source Leakage Current-

Forward

IGSSF

100

VGSR=20V, VDS=0

Gate Threshhold Voltage

VGS(th)

2.0

4.0

VDS=VGS, ID=250uA

Drain-Source On-Resistance

RDS(on)

Ohm

VGS=10V, ID=0.6A*

Input Capacitance

Ciss

210

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=25V, VGS=0, f=1 MHz

Turn-On Delay Time

ton

Turn-Off Delay Time

toff

VDS=300V, ID=1.0A,

Rise Time

Fall Time

VGS=10V, RG=18Ω

Total Gate Charge

8.5

Gate-Drain Charge

Qgd

8.5

VDS=400V, ID=1.0A

Gate-Drain Charge

Qgs

1.8

VGS=10V*

Intemal Drain Inductance

4.5

Measured from the drain lead

0.25’’ From package to center

of die

Internal Drain Inductance

7.5

Measured from the sorce lead

0.25’’ package to source bond

pad

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

VDS

1.5

Forward Tum Time

ton

Reverse Recovery Time

trr

350

500

Is=1.0A, VGS=0V

dIS/dt = 100A/μS

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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