P Channel Enhancement Mode MOSFET

ST3413

-3.4A

DESCRIPTION

The ST3413 is the P-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other batter powered circuits where high-side

switching, and low in-line power loss are needed in a very small outline surface mount

package.

PIN CONFIGURATION

SOT-23-3L

1.Gate

2.Source

3.Drain

1A: Part Marking Y: Year Code

A: Process Code

Page 1

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

FEATURE

-

@VGS = -4.5V

@VGS = -2.5V

@VGS = -1.8V

Super high density cell design for

Exceptional on-resistance and

maximum DC current capability

SOT-23-3L package design

3

1

2

D

G

S

3

1

2

13YA