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STIB1060DM2T-LZ Arkusz danych(PDF) 12 Page - STMicroelectronics |
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STIB1060DM2T-LZ Arkusz danych(HTML) 12 Page - STMicroelectronics |
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12 / 23 page ![]() 4.1 Smart shutdown function The device integrates a comparator committed to the fault sensing function. The comparator input can be connected to an external shunt resistor in order to implement a simple overcurrent detection function. The output signal of the comparator is fed to an integrated MOSFET with the open drain output available on the SD input. When the comparator triggers, the device is set in shutdown state and its outputs are all set to low level. Figure 6. Smart shutdown timing waveforms in case of overcurrent event LIN LVG SD open-drain gate (internal) comp Vref CIN PROTECTION Fast shutdown: the driver outputs are set in SD state immediately after comparator triggering even if the SD signal has not yet reached the lower input threshold real disable time t OC t2 t1 SD FROM / TO CONTROLLER VBIAS SMART SD LOGIC CSD RSD R ON_OD R PD_SD SHUTDOWN CIRCUIT where: l t CIN_SD t1 t2 RON_OD = VOD/5 mA, see Table 10. Sense comparator (VCC = 15 V, unless otherwise is specified); RPD_SD (typ.) = 5 V/ISDh STIB1060DM2T-LZ Smart shutdown function DS13941 - Rev 1 page 12/23 |
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