3

Electrical characteristics

TJ = 25 °C unless otherwise noted.

3.1

Inverter part

Table 6. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain current

VDS = 600 V, VCC = Vboot = 15 V

100

μA

V(BR)DSS

Drain-source breakdown voltage

VCC = Vboot = 15 V,

VIN(1) = 0 V, ID = 1 mA

600

V

RDS(on)

Static drain-source turn-on

resistance

VCC = Vboot = 15 V, VIN(1) = 0 to 5 V,

ID = 1.5 A

0.13

Ω

VCC = Vboot = 15 V, VIN(1) = 0 to 5 V,

ID = 15 A

0.15

0.17

VSD

Drain-source diode forward

voltage

VIN(1) = 0 V, ID = 15 A

0.98

1.36

V

1. Applied among HINx, LINx and GND for x = U, V, W.

Table 7. Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton(1)

Turn-on time

VDD = 300 V, VCC = Vboot = 15 V,

VIN(2) = 0 to 5 V, ID = 15 A

-

690

-

ns

tc(on)(1)

Cross-over time on

-

210

-

toff(1)

Turn-off time

-

1100

-

tc(off)(1)

Cross-over time off

-

77

-

trr

Reverse recovery time

-

230

-

Eon

Turn-on switching energy

-

750

-

µJ

Eoff

Turn-off switching energy

-

115

-

Err

Reverse recovery energy

-

14

-

1. ton and toff include the propagation delay time of the internal drive. tC(on) and tC(off) are the switching times of the MOSFET

itself under the internally given gate driving condition.

2. Applied among HINx, LINx and GND for x = U, V, W.

STIB1560DM2T-L

Electrical characteristics

DS12125 - Rev 3

page 6/23