ACS1026T datasheet(5/11 Pages) STMICROELECTRONICS

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ACS102-6T

1 Characteristics

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Figure 7.

On-state characteristics (maximal

values)

Figure 8.

SO-8 junction to ambient thermal

resistance versus copper surface

under tab (PCB FR4, copper

thickness 35 µm)

Figure 9.

Relative variation of critical rate of

decrease of main current (di/dt)c

versus junction temperature

Figure 10. Relative variation of critical rate of

decrease of main current (di/dt)c vs

(dV/dt)c, with turn-off time < 20 ms

Figure 11. Relative variation of static dV/dt

versus junction temperature

Figure 12. Relative variation of the maximal

clamping voltage versus junction

temperature (min value)

0.01

0.10

1.00

10.00

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

ITM(A)

j max.:

to= 0.8 V

d= 500 mΩ

Tj=25°C

Tj=125°C

VTM(V)

100

120

140

160

100

150

200

250

300

th(j-a)(°C/W)

SO-8

SCU(mm²)

(dI/dt) [T ] / (dI/dt) [T =125 °C]

105

115

125

T (°C)

out = 400 V

(dI/dt)

c [(dV/dt) c ] / Specified (dI/dt)c

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

100

(dV/dt)c (V/µs)

out = 400 V

100

125

dV/dt [Tj]/ dV/dt[T j=125°C]

out=400V

Tj(°C)

0.50

0.60

0.70

0.80

0.90

1.00

1.10

1.20

-25

100

125

CL [Tj]/ VDRM

Tj(°C)

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