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2SC5975 Arkusz danych(PDF) 3 Page - Renesas Technology Corp

Numer części 2SC5975
Szczegółowy opis  SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR
PDF  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5975 Arkusz danych(HTML) 3 Page - Renesas Technology Corp

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2SC5975
Rev.1.00, Jul.06.2004, page 3 of 17
Main Characteristics
Typical Output Characteristics
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
3.5
4
Collector to Emitter Voltage
VCE (V)
200
µA
Collector Power Dissipation Curve
0
50
100
150
200
0
50
100
150
200
Ambient Temperature
Ta (
°C)
Collector Output Capacitance vs.
Collector to Base Voltage
0
0.1
0.2
0.3
0.4
0.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector to Base Voltage VCB (V)
Emitter Input Capacitance vs.
Emitter to Base Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Emitter to Base Voltage VEB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0
0.05
0.1
0.15
0.2
0.25
0.3
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector to Base Voltage VCB (V)
DC Current Transfer Ratio vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
200
1
10
100
Collector Current
IC (mA)
VCE = 1 V
2 V
3 V
IB = 20
µA
40
µA
60
µA
80
µA
100
µA
120
µA
140
µA
160
µA
180
µA
IE = 0
f = 1 MHz
IC = 0
f = 1 MHz
Value on PCB
(FR-4 : 40 x 40 x 1.6 mm
Double side)
Emitter grounding
f = 1 MHz



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