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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRLR2908 Arkusz danych(PDF) 2 Page - International Rectifier |
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IRLR2908 Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR2908/IRLU2908 2 www.irf.com S D G S D G Notes through are on page 11 HEXFET® is a registered trademark of International Rectifier. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 22.5 28 m Ω ––– 25 30 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V gfs Forward Transconductance 35 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 22 33 nC Qgs Gate-to-Source Charge ––– 6.0 9.1 Qgd Gate-to-Drain ("Miller") Charge ––– 11 17 td(on) Turn-On Delay Time ––– 12 ––– ns tr Rise Time –––95––– td(off) Turn-Off Delay Time ––– 36 ––– tf Fall Time –––55––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1890 ––– pF Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 35 ––– Coss Output Capacitance ––– 1920 ––– Coss Output Capacitance ––– 170 ––– Coss eff. Effective Output Capacitance ––– 310 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 39 (Body Diode) A ISM Pulsed Source Current ––– ––– 150 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 75 110 ns Qrr Reverse Recovery Charge ––– 210 310 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = 64V VGS = 4.5V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 4.5V f MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 64V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 64V TJ = 25°C, IF = 23A, VDD = 25V di/dt = 100A/µs f TJ = 25°C, IS = 23A, VGS = 0V f showing the integral reverse p-n junction diode. VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C RG = 8.3Ω ID = 23A VDS = 25V, ID = 23A VDD = 40V ID = 23A VGS = 16V VGS = -16V VGS = 4.5V, ID = 20A f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 23A f |
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