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STF18N60DM2 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STF18N60DM2 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Features Order code VDS RDS(on) max. ID STF18N60DM2 600 V 0.295 Ω 12 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STF18N60DM2 Product summary Order code STF18N60DM2 Marking 18N60DM2 Package TO-220FP Packing Tube N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package STF18N60DM2 Datasheet DS10966 - Rev 5 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
Podobny numer części - STF18N60DM2 |
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Podobny opis - STF18N60DM2 |
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