STF35N65DM2 datasheet(5/13 Pages) STMICROELECTRONICS

Numer części	STF35N65DM2

Szczegółowy opis	N-channel 650 V, 0.093 typ., 32 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

PDF	13 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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5 / 13 page

STF35N65DM2

Electrical characteristics

DocID030873 Rev 2

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 32 A

1.6

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: "Test

circuit for inductive load

switching and diode recovery

times")

100

Qrr

Reverse recovery

charge

0.42

µC

IRRM

Reverse recovery

current

8.4

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

205

Qrr

Reverse recovery

charge

1.8

µC

IRRM

Reverse recovery

current

17.6

Notes:

(1)Pulse width is limited by safe operating area.

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

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