DDC144TH

Document number: DS37170 Rev. 1 - 2

2 of 5

www.diodes.com

December 2014

© Diodes Incorporated

DDC144TH

Absolute Maximum Ratings (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Supply Voltage

VCC

50

V

Input Voltage

VIN

-10 to +40

V

Output Current

IC(MAX)

100

mA

Thermal Characteristics (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Notes 5 & 6)

PD

150

mW

Thermal Resistance, Junction to Ambient Air (Note 5)

RJA

833

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

50





V

IC = 50μA

Collector-Emitter Breakdown Voltage

BVCEO

50





V

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

5





V

IE = 50μA

Collector Cutoff Current

ICBO





0.5

μA

VCB = 50V

Emitter Cutoff Current

IEBO





0.5

μA

VEB = 4V

Collector-Emitter Saturation Voltage

VCE(sat)





0.3

V

IC/IB = 1mA / 0.1mA

DC Current Transfer Ratio

hFE

100

250

600



IC = 1mA, VCE = 5V

Input Resistor (R1)

R1

32.9

4

7Ω

61.1

k

Ω



Gain-Bandwidth Product (Note 7)

fT



250



MHz

VCE = 10V, IE = -5mA, f = 100MHz

Notes:

5. Mounted on FR4 PC Board with minimum recommended pad layout.

6. 200mW per element must not be exceeded.

7. Transistor - For Reference Only