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APT1002RCN Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części APT1002RCN
Szczegółowy opis  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

APT1002RCN Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
APT1002RCN
FEATURES
·
Drain Current : ID= 5.5A@ TC=25℃
·
Drain Source Voltage
: VDSS= 1000V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 2Ω(Max) @ VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1000
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
5.5
A
IDM
Drain Current-Single Pluse
22
A
PD
Total Dissipation @TC=25℃
150
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.83
℃
/W


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