GW60V60DF datasheet(7/20 Pages) STMICROELECTRONICS

Numer części	GW60V60DF

Szczegółowy opis	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

PDF	20 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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7 / 20 page

DocID024154 Rev 7

7/20

STGW60V60DF, STGWA60V60DF, STGWT60V60DF

Electrical characteristics

Figure 8. Collector current vs. switching

frequency

Figure 9. Safe operating area

Figure 10. Transfer characteristics

Figure 11. Diode VF vs. forward current

Figure 12. Normalized VGE(th) vs. junction

temperature

Figure 13. Normalized V(BR)CES vs. junction

temperature

AM17145v1

100

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, RG=4.7Ω,

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

AM17146v1

0.01

0.1

100

110

100

IC (A)

VCE (V)

(single pulse T

C =25 °C,

J <=175 °C; VGE =15 V)

1 μs

100 μs

1 ms

AM17146v1

175 °C

100

150

200

6789

IC (A)

VGE (V)

- 40 °C

TJ= 25°C

VCE= 5V

AM17148v1

0.8

1.2

1.6

2.4

2.8

110

VF (V)

IF (A)

175 °C

25°C

TJ= - 40°C

VCE= VGE

IC= 1 mA

AM17149v1

0.6

0.7

0.8

0.9

1.0

1.1

-50 -25

75 100 125 150 175

VGE(th)

norm

TJ(ºC)

AM17150v1

0.9

1.0

1.1

-50 -25

75 100 125 150 175

V(BR)ces

norm

TJ(ºC)

IC= 2 mA

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