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AP4407GR Arkusz danych(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4407GR Arkusz danych(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 4 page ![]() AP4407GR Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1317 2125 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 14 0 2040 6080 Q G , Total Gate Charge (nC) I D = - 24 A V DS = -24V 1 10 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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