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AP4569GD Arkusz danych(PDF) 7 Page - Advanced Power Electronics Corp.

Numer części AP4569GD
Szczegółowy opis  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
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Producent  A-POWER [Advanced Power Electronics Corp.]
Strona internetowa  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4569GD Arkusz danych(HTML) 7 Page - Advanced Power Electronics Corp.

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AP4569GD
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
0
3
6
9
12
0.0
4.0
8.0
12.0
Q G , Total Gate Charge (nC)
I D =-3A
V DS =-30V
10
100
1000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0
5
10
15
20
02
46
-V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =-5V
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Q
VG
-4.5V
QGS
QGD
QG
Charge



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