Figure 7. Surge peak on-state current versus number of

cycles

0

10

20

30

40

50

60

70

1

10

100

1000

ITSM(A)

Number of cycles

Repetitive

Tc = 128°C

Non repetitive

Tj initial = 25 °C

t=20ms

One cycle

Figure 8. Non repetitive surge peak on-state current for a

sinusoidal pulse with width tp < 10 ms

10

100

1000

0.01

0.10

1.00

10.00

ITSM(A)

t (ms)

p

T initial=25°C

j

ITSM

dI/dt limitation:

100A/µs

Figure 9. On-state characteristics (maximum values)

1

10

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

ITM(A)

VTM(V)

Tj max.

Vto = 0.87 V

Rd = 80 mΩ

Tj = 150 °C

Tj = 25 °C

Figure 10. Relative variation of critical rate of decrease of

main current versus junction temperature

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

25

50

75

100

125

150

(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]

Tj(°C)

Figure 11. Relative variation of static dV/dt immunity

versus junction temperature

0

1

2

3

4

5

6

25

50

75

100

125

150

dV/dt [Tj] / dV/dt [Tj = 150 °C]

Tj(°C)

VD = VR = 402 V

Figure 12. Relative variation of leakage current versus

junction temperature for different values of blocking

voltage

1.0E-03

1.0E-02

1.0E-01

1.0E+00

25

50

75

100

125

150

IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,VDRM/VRRM]*

Tj(°C)

VDRM = VRRM = 800 V

VDRM = VRRM = 600 V

*[Tj max = 125 °C; VDRM, VRRM = 800 V]

[Tj max = 150 °C; VDRM, VRRM = 600 V]

T835T-8G

Characteristics (curves)

DS12531 - Rev 3

page 5/11