Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250 µA)

DS

> I

D

(ON) x R

DS

(ON) Max, V

GS

= 12V)

Drain-Source On-State Resistance

GS

= 12V, 29A)

Zero Gate Voltage Drain Current (V

DS

= 500V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 400V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= 2.5mA)

MIN

TYP

MAX

500

58

0.09

25

250

±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

Symbol

BV

DSS

I

D

(ON)

R

DS

(ON)

I

DSS

I

GSS

V

GS

(TH)

APT Website - http://www.advancedpower.com

LINEAR MOSFET

Linear Mosfets are optimized for applications operating in the Linear

region where concurrent high voltage and high current can occur at

near DC conditions (>100 msec).

• Higher FBSOA

• Higher Power Dissipation

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

APL502B2-L

500

58

232

±30

±40

730

5.84

-55 to 150

300

58

50

3000

T-MAX™

TO-264

B2

APL502B2

APL502L

500V

58A 0.090

Ω

Ω

Ω

Ω

Ω

G

D

S

L