VS-U5FX300FA60

www.vishay.com

Vishay Semiconductors

Revision: 19-May-2022

1

Document Number: 96944

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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FRED Pt® Gen 5

Hyperfast Rectifier Diode, 600 V, 300 A

FEATURES

• Hyperfast and optimized Qrr

• Best in class forward voltage drop and switching

losses trade off

• Optimized for high speed operation

• 175 °C maximum operating junction temperature

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Designed and qualified for industrial level

• UL approved file E78996

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

Featuring a unique combination of low conduction and

switching losses, the VS-U5FX300FA60 is the right choice

for high frequency converters, both soft switched / resonant.

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built.

These modules are specifically designed to improve

efficiency of PFC and output rectification stages of EV / HEV

battery charging stations, booster stage of solar inverters,

and UPS applications, these devices are perfectly matched

to operate with MOSFETs or high speed IGBTs.

PRIMARY CHARACTERISTICS

VR

600 V

VF (typical) at 150 A, per diode

1.6 V

trr (typical) at 150 A, per diode

72 ns

IF(DC) per module at TC = 80 °C

300 A

Type

Modules - diode, FRED Pt®

Package

SOT-227

Circuit configuration

Two separate diodes,

parallel pin-out

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Cathode to anode voltage

VR

600

V

Continuous forward current per diode

IF

TC = 80 °C

150

A

Single pulse forward current per diode

IFSM

TJ = 25 °C

1035

Maximum power dissipation per module

PD

TC = 80 °C

529

W

RMS isolation voltage

VISOL

Any terminal to case, t = 1 min

2500

V

Operating junction and storage temperature range

TJ, TStg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode breakdown voltage

VBR

IR = 200 μA

600

-

-

V

Forward voltage

VFM

IF = 150 A

-

1.6

2.2

IF = 150 A, TJ = 150 °C

-

1.31

-

Reverse leakage current

IRM

VR = 600 V

-

0.3

100

μA

TJ = 125 °C, VR = 600 V

-

77

-

TJ = 150 °C, VR = 600 V

-

343

-