| Zakładka z wyszukiwarką danych komponentów |
|
DF2S16CT Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
DF2S16CT Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
|
2 / 6 page ![]() DF2S16CT 2 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. Fig. Fig. Fig. 4.1 4.1 4.1 4.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Zener voltage Dynamic impedance Reverse current Total capacitance Symbol VZ ZZ IR Ct Note Test Condition IZ = 5 mA IZ = 5 mA VR = 12 V VR = 0 V, f = 1 MHz Min 15.3 Typ. 10 Max 17.1 35 0.5 Unit V Ω µA pF 5. 5. 5. 5. Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Test Condition IEC61000-4-2 (Contact discharge) ESD Protection ±12 kV Note: Criterion: No damage to devices. 2014-04-14 Rev.4.0 |
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |