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DMN5L06 Arkusz danych(PDF) 2 Page - Diodes Incorporated

Numer części DMN5L06
Szczegółowy opis  SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  4 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN5L06 Arkusz danych(HTML) 2 Page - Diodes Incorporated

  DMN5L06 Datasheet HTML 1Page - Diodes Incorporated DMN5L06 Datasheet HTML 2Page - Diodes Incorporated DMN5L06 Datasheet HTML 3Page - Diodes Incorporated DMN5L06 Datasheet HTML 4Page - Diodes Incorporated  
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DS30614 Rev. 3 - 2
2 of 4
DMN5L06
www.diodes.com
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
50
¾¾
V
VGS = 0V, ID = 10
mA
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
¾¾
0.1
500
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
¾¾
±20
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
0.49
¾
1.2
V
VDS =VGS, ID = 250
mA
Static Drain-Source On-Resistance
RDS (ON)
¾
¾
1.6
2.2
3
4
W
VGS = 2.7V, ID = 0.2A,
VGS = 1.8V, ID = 50mA
On-State Drain Current
ID(ON)
0.5
1.0
¾
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
200
¾¾
mS
VDS =10V, ID = 0.2A
Source-Drain Diode Forward Voltage
VSD
0.5
¾
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
¾¾
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
¾¾
25
pF
Reverse Transfer Capacitance
Crss
¾¾
5.0
pF
0
0.3
0.6
0.9
01
2
3
4
5
V
DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
DS,
1.2
1.5
6V
10V
5V
3V
4V
V= 10V
8V
6V
5V
4V
3V
GS
8V
V
, GATE-SOURCE VOLTAGE (V)
Fig.2 Typical Transfer Characteristics
GS
0.01
3
0.001
0.1
1
0
0.5
1
1.5
2
2.5
3.5
V
= 10V
Pulsed
DS
T= 150 C
A
°
T = 125 C
A
°
T= 85 C
A
°
T= 25 C
A
°
T= -55 C
A
°
T= 0 C
A
°
T= -25 C
A
°



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