AP64100Q

Document number: DS43575 Rev. 1 - 2

7 of 26

www.diodes.com

July 2021

© Diodes Incorporated

AP64100Q

Typical Performance Characteristics (AP64100Q @ TA = +25°C, VIN = 12V, VOUT = 5V, fSW = 500kHz (RT = 200kΩ ± 1%),

BOM = Table 1, unless otherwise specified.)

Figure 4. Efficiency vs. Output Current, VIN = 12V

Figure 5. Efficiency vs. Output Current, VIN = 24V

Figure 6. Line Regulation

Figure 7. Load Regulation

Figure 8. Feedback Voltage vs. Temperature, IOUT = 1A

Figure 9. Power MOSFET RDS(ON) vs. Temperature

50

55

60

65

70

75

80

85

90

95

100

0.001

0.010

0.100

1.000

10.000

IOUT (A)

VOUT = 5V, L = 15

μH

VOUT = 3.3V, L = 15

μH

50

55

60

65

70

75

80

85

90

95

100

0.001

0.010

0.100

1.000

10.000

IOUT (A)

VOUT = 5V, L = 15

μH

VOUT = 3.3V, L = 15

μH

4.95

4.96

4.97

4.98

4.99

5.00

5.01

5.02

5.03

5.04

5.05

5

10

15

20

25

30

35

40

45

VIN (V)

IOUT = 0A

IOUT = 0.5A

IOUT = 1A

4.975

4.980

4.985

4.990

4.995

5.000

5.005

5.010

5.015

5.020

5.025

0.000 0.125 0.250 0.375 0.500 0.625 0.750 0.875 1.000

IOUT (A)

VIN = 12V

VIN = 24V

0.794

0.795

0.796

0.797

0.798

0.799

0.800

0.801

0.802

0.803

0.804

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

30

50

70

90

110

130

150

170

190

210

230

-50

-25

0

25

50

75

100

125

150

Temperature (

°C)

High-Side MOSFET

Low-Side MOSFET