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FDB8453LZ Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FDB8453LZ Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFETTransistor FDB8453LZ FEATURES · Drain Current : ID=50A@ TC=25℃ · Drain Source Voltage : VDSS=40V(Min) · Static Drain-Source On-Resistance : RDS(on) =7mΩ(Max) @ VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous;@Tc=25℃ 50 A IDM Drain Current-Single Pulsed 100 A PD Total Dissipation 66 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.9 ℃ /W |
Podobny numer części - FDB8453LZ |
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