Characteristics

P0109AL

4/8

DocID030704 Rev 2

Figure 7: Relative variation of dV/dt immunity

versus gate-cathode capacitance

Figure 8: Surge peak on-state current versus

number of cycles

Figure 9: Non-repetitive surge peak on-state

current for sinusoidal pulse (tp< 10 ms)

Figure 10: On-state characteristics

Figure 11: Thermal resistance junction to ambient versus copper surface under tab

0

1

2

3

4

5

6

7

0

2

4

6

8

10

C

(nF)

GK

dV/dt[C

] / dV/dt[

= 1k , CGK = 0 F]

GK

Ω

RGK

T

V = 0.67 xV

= 125°C

R

= 1k

D

DRM

GK

j

Ω

Typical values

I

(A)

TSM

1

1 0

100

1000

0

1

2

3

4

5

6

7

8

Number of cycles

Non repetitive

T initial = 25°C

j

Repetitive

T

= 36 °C

amb

t = 10ms

p

One cycle

100.0

10.0

1.0

0.1

0.01

0.10

1.00

10.00

T initial = 25°C

j

ITSM

t (ms)

p

ITSM(A)