2

6A HIGH-SPEED MOSFET DRIVERS

TC4420

TC4429

TC4420/9-6 10/18/96

© 2001 Microchip Technology Inc.

DS21419A

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 High Input Voltage

2.4

1.8

—

V

VIL

Logic 0 Low Input Voltage

—

1.3

0.8

V

VIN (Max)

Input Voltage Range

– 5

—

VDD +0.3

V

IIN

Input Current

0V

≤ VIN ≤ VDD

– 10

—

10

µA

Output

VOH

High Output Voltage

See Figure 1

VDD – 0.025

——

V

VOL

Low Output Voltage

See Figure 1

——

0.025

V

RO

Output Resistance, High

IOUT = 10 mA, VDD = 18V

—

2.1

2.8

Ω

RO

Output Resistance, Low

IOUT = 10 mA, VDD = 18V

—

1.5

2.5

Ω

IPK

Peak Output Current

VDD = 18V (See Figure 5)

—

6

—

A

IREV

Latch-Up Protection

Duty Cycle

≤ 2%

1.5

——

A

Withstand Reverse Current

t

≤ 300µsec

Switching Time (Note 1)

tR

Rise Time

Figure 1, CL = 2500pF

—

25

35

nsec

tF

Fall Time

Figure 1, CL = 2500pF

—

25

35

nsec

tD1

Delay Time

Figure 1

—

55

75

nsec

tD2

Delay Time

Figure 1

—

55

75

nsec

Power Supply

IS

Power Supply Current

VIN = 3V

—

0.45

1.5

mA

VIN = 0V

—

55

150

µA

VDD

Operating Input Voltage

4.5

—

18

V

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage ............................................... – 5V to > VDD

Input Current (VIN > VDD) .........................................50mA

Power Dissipation, (TA ≤ 70°C)

PDIP ............................................................... 730mW

SOIC ............................................................... 470mW

CerDIP ............................................................ 800mW

5-Pin TO-220 ...................................................... 1.6W

Package Power Dissipation, TC ≤ 25°C

5-Pin TO-220 (With Heat Sink) ......................... 12.5W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/

°C

SOIC ............................................................. 4mW/

°C

CerDIP ....................................................... 6.4mW/

°C

5-Pin TO-220 .............................................. 12mW/

°C

Thermal Impedances (To Case)

5-Pin TO-220 RθJ-C ...................................................... 10°C/W

Storage Temperature Range ................ – 65

°C to +150°C

Operating Temperature (Chip) .............................. +150

°C

Operating Temperature Range (Ambient)

C Version ............................................... 0

°C to +70°C

I Version ........................................... – 25

°C to +85°C

E Version .......................................... – 40

°C to +85°C

M Version ....................................... – 55

°C to +125°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields.

Stresses above those listed under "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only

and functional operation of the device at these or any other conditions

above those indicated in the operation sections of the specifications is

not implied. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability.