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IPW60R037CSFD Arkusz danych(PDF) 6 Page - Infineon Technologies AG |
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IPW60R037CSFD Arkusz danych(HTML) 6 Page - Infineon Technologies AG |
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6 / 14 page ![]() 6 600VCoolMOSªCSFDPowerTransistor IPW60R037CSFD Rev.2.0,2017-12-11 Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.0 - V VGS=0V,IF=32.6A,Tj=25°C Reverse recovery time trr - 168 - ns VR=400V,IF=16A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.94 - µC VR=400V,IF=16A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 8.9 - A VR=400V,IF=16A,diF/dt=100A/µs; see table 8 |
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