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1998

©

Document No. D15597EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC4551

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC4551 is a power transistor developed for high-speed

switching and features low VCE(sat) and high hFE. This transistor is

ideal for use in drivers such as DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High hFE and low VCE(sat):

hFE

≥ 100 (VCE = 2 V, IC = 2 A)

VCE(sat)

≤ 0.3 V (IC = 6 A, IB = 0.3 A)

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

100

V

Collector to emitter voltage

VCEO

60

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

10

A

Collector current (pulse)

IC(pulse)*20

A

Base current (DC)

IB(DC)

5.0

A

Total power dissipation

PT (Tc = 25

°C)

30

W

Total power dissipation

PT (Ta = 25

°C)

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

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