1.

Product profile

1.1 General description

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small

Surface-Mounted Device (SMD) plastic package with medium power capability and visible

and solderable side pads.

NPN complement: BC68PAS series

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

[1]

Pulse test: tp  300 ms;  0.02.

BC69PAS series

20 V, 2 A PNP medium power transistors

Rev. 1 — 19 June 2015

Product data sheet

 High collector current capability

IC and ICM

 Three current gain selections

 Reduced Printed-Circuit Board (PCB)

area requirements

 Leadless very small SMD plastic

package with medium power capability

 Exposed heat sink for excellent thermal

and electrical conductivity

 Suitable for Automatic Optical

Inspection (AOI) of solder joint

 AEC-Q101 qualified

 Linear voltage regulators

 High-side switches

 Battery driven devices

 Power management

 MOSFET drivers

 Amplifiers

Table 1.

Quick reference data

Tamb = 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage open base

-

-

20 V

IC

collector current

-

-

2A

ICM

peak collector current

single pulse; tp  1ms

-

-

3A

hFE

DC current gain

VCE = 1V; IC = 500 mA

[1] 85

-

375

hFE selection -16

VCE = 1V; IC = 500 mA

[1] 100

-

250

hFE selection -25

VCE = 1V; IC = 500 mA

[1] 160

-

375