DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5186

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR LOW-NOISE MICROWAVE AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

Document No. PU10213EJ01V0DS (1st edition)

(Previous No. P12110EJ2V0DS00)

Date Published January 2003 CP(K)

Printed in Japan

The mark

•

•

•

• shows major revised points.

©

©

©

© NEC Compound Semiconductor Devices 1994, 2003

FEATURES

• Low noise

NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

• 3-pin ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5186

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5186-T1

3 kpcs/reel

• Pin 3 (collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

Ptot

Note

90

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air