DATA SHEET

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this is the latest version.

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representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5433

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

Document No. PU10101EJ01V0DS (1st edition)

(Previous No. P13077EJ1V0DS00)

Date Published February 2002 CP(K)

Printed in Japan

The mark

•

•

•

• shows major revised points.

©

©

©

© NEC Corporation 1998

©

©

©

© NEC Compound Semiconductor Devices 2002

FEATURES

• Contains same chip as 2SC5007

• Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5433

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5433-T1

3 kpcs/reel

• Pin 3 (collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

20

V

Collector to Emitter Voltage

VCEO

10

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

65

mA

Total Power Dissipation

Ptot

Note

125

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.