DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

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this is the latest version.

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Document No. PU10008EJ02V0DS (2nd edition)

Date Published March 2003 CP(K)

Printed in Japan

NPN SILICON RF TRANSISTOR

2SC5754

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

The mark

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• shows major revised points.

©

©

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© NEC Compound Semiconductor Devices 2001, 2003

FEATURES

• Ideal for 460 MHz to 2.4 GHz medium output power amplification

•PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

• High collector efficiency:

ηC = 60%

• UHS0-HV technology (fT = 25 GHz) adopted

• High reliability through use of gold electrodes

• Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5754

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5754-T2

3 kpcs/reel

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.