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1998

©

Document No. D16138EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SD1695

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET

2002

The 2SD1695 is a Darlington connection transistor and

incorporates a dumper diode between the collector and emitter and

a constant voltage diode and protection elements between the

collector and base. This transistor is ideal for drives in solenoid and

actuators.

FEATURES

• On-chip protection elements enable time and cost reduction.

C to E: Dumper diode

C to B: Constant diode

• Low collector saturation voltage

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know

the specification of quality grade on the devices and its

recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

31

±4

V

Collector to emitter voltage

VCEO

31

±4

V

Emitter to base voltage

VEBO

8.0

V

Collector current (DC)

IC(DC)

±2.0

A

Collector current (pulse)

IC(pulse)*

±3.0

A

Base current (DC)

IB(DC)

0.2

A

Total power dissipation

PT (Ta = 25

°C)

1.3

W

Total power dissipation

PT (Tc = 25

°C)

10

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

1. Emitter

2. Collector

3. Base

4. Collector (fin)