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STC6NF30V Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STC6NF30V
Szczegółowy opis  N-channel 30V - 0.020 - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET
PDF  8 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STC6NF30V Arkusz danych(HTML) 3 Page - STMicroelectronics

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STC6NF30V
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 3 A
RG = 4.7 Ω
VGS = 2.5 V
(Resistive Load, Figure 1)
20
25
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 15V ID= 6A VGS=2.5V
(see test circuit, Figure 2)
6.8
2.0
3.4
9nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 3 A
RG = 4.7Ω,
VGS = 2.5 V
(Resistive Load, Figure 1)
32
13
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
6
24
A
A
VSD (*)
Forward On Voltage
ISD = 6 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 3)
25
21
1.7
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area.
Thermal Impedance.



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