CEF07N7 datasheet(1/4 Pages) CET-MOS

Numer części	CEF07N7

Szczegółowy opis	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Producent	CET-MOS [CET-MOS Technology Corp.]

Strona internetowa	https://www.cet-mos.com/en/index.asp

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CEP07N7/CEB07N7

CEF07N7

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM e

700

1.3

166

26.4

6.6

±30

V

W

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS

RDS(ON)

ID

@VGS

CEP07N7

CEF07N7

700V

1.5Ω

6.6A

6.6A d

10V

0.4

50

26.4d

6.6d

CEB07N7

700V

1.5Ω

6.6A

10V

TO-220/263

TO-220F

http://www.cet-mos.com

Details are subject to change without notice .

Rev 4. 2012.Nov

Repetitive Avalanche Energy

Single Pulsed Avalanche Energy h

EAR

EAS

3.6

38.88

mJ

Lead-free plating ; RoHS compliant.

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

0.75

RθJC

RθJA

2.5

65

Podobny numer części - CEF07N7

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CEF07N7 Arkusz danych(PDF) 1 Page - CET-MOS Technology Corp.

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