BAS321 datasheet(3/12 Pages) PHILIPS

Numer części	BAS321

Szczegółowy opis	General purpose diode

PDF	12 Pages

Scroll/Zoom	100%

Producent	PHILIPS [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

Logo

3 / 12 page

1999 Feb 09

Philips Semiconductors

Product speciﬁcation

General purpose diode

BAS321

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Notes

1. Soldering point of cathode tab.

2. Device mounted on an FR4 printed circuit board.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

see Fig. 3

IF = 100 mA

IF = 200 mA

1.25

reverse current

see Fig. 5

VR = 200 V

100

VR = 200 V; Tj = 150 °C

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig. 6

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR = 3 mA; see Fig.8

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering

point

Ts =90°C; note 1

130

K/W

Rth j-a

thermal resistance from junction to ambient

note 2

366

K/W

BAS321 Arkusz danych(PDF) 3 Page - NXP Semiconductors

BAS321 Arkusz danych(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Arkusz danych Pobierz

Link URL