CED25N02 datasheet(1/4 Pages) CET-MOS

Numer części	CED25N02

Szczegółowy opis	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Producent	CET-MOS [CET-MOS Technology Corp.]

Strona internetowa	https://www.cet-mos.com/en/index.asp

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N-Channel Enhancement Mode Field Effect Transistor

CED25N02/CEU25N02

FEATURES

20V, 25A, RDS(ON) = 23mΩ @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

20

0.2

25

100

25

±10

V

W

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

S

D

RDS(ON) = 33mΩ @VGS = 2.5V.

RoHS compliant.

Details are subject to change without notice .

Rev 2. 2015.Jan

http://www.cet-mos.com

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

50

5

RθJC

RθJA

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