BCV47Q

Document number: DS39807 Rev. 1 - 2

4 of 7

www.diodes.com

November 2017

© Diodes Incorporated

BCV47Q

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

80

—

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

60

—

—

V

ICEO = 10mA

Emitter-Base Breakdown Voltage

BVEBO

10

—

—

V

IEBO = 10µA

Collector cut-off current

ICBO

—

—

<1

—

100

10

nA

µA

VCB = 60V

VCB = 60V, TA = +150°C

Emitter-base Cut-off Current

IEBO

—

<1

100

nA

VEB = 4V

ON CHARACTERISTICS (Note 10)

Static Forward Current Transfer Ratio

hFE

2,000

4,000

10,000

2,000

—

—

—

IC = 100µA, VCE = 1V

IC = 10mA, VCE = 5V

IC = 100mA, VCE = 5V

IC = 500mA, VCE = 5V

Collector-Emitter Saturation Voltage

VCE(sat)

—

—

1.0

V

IC = 100mA, IB = 0.1mA

Base-Emitter Saturation Voltage

VBE(sat)

—

—

1.5

V

IC = 100mA, IB = 0.1mA

SMALL SIGNAL CHARACTERISTICS (Note 10)

Transition Frequency

fT

—

170

—

MHz

IC = 50mA, VCE = 5V,

f = 20MHz

Output Capacitance

Cobo

—

3.5

—

pF

VCB = 10V, f = 1MHz

Note:

10.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.