IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 3N120

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106

5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796

5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

1.5

2.2

S

C

iss

1050 1300

pF

C

oss

V

GS

= 0 V, V

100 125

pF

C

rss

25

50

pF

t

d(on)

17

ns

t

r

V

GS

= 10 V, V

15

ns

t

d(off)

R

32

ns

t

f

18

ns

Q

g(on)

39

nC

Q

gs

V

GS

= 10 V, V

9nC

Q

gd

22

nC

R

thJC

0.8

K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

3

A

I

SM

Repetitive; pulse width limited by T

JM

12

A

V

SD

I

1.5

V

t

rr

I

700

ns

Notes: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3